Quantitative characteristics of traps in AlGaN/GaN MIS-HEMT via transient capacitance measurement

DOI

10.2991/aest-16.2016.43How to use a DOI?

Keywords

AlGaN/GaN MIS-HEMT; transient capacitance measurement; traps.

Abstract

The electrical property degradation of AlGaN/GaN MIS-HEMT, including degradation of output characteristics, a higher ON-resistance and a threshold voltage negative shift (~1.8V), is correlated with near-interface trap behaviours in SiN/AlGaN. These traps are quantitatively characterized using the transient capacitance measurement, from which we could estimate the near-interface trap densities in the SiN/AlGaN. Measurements reveal the trap density before step-stress with 1.404x1015cm-3 and an increased density of 1.709x1015cm-3 after step-stress. A hot electron injection model is used to discuss the relationship between trap behaviours and device reliability.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jie Lin
AU  - Bin Dong
AU  - Ning Wang
AU  - Zongdai Liu
AU  - Lingli Jiang
AU  - Kai Cheng
AU  - Hongyu Yu
PY  - 2016/11
DA  - 2016/11
TI  - Quantitative characteristics of traps in AlGaN/GaN MIS-HEMT via transient capacitance measurement
BT  - Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
PB  - Atlantis Press
SP  - 332
EP  - 337
SN  - 1951-6851
UR  - https://doi.org/10.2991/aest-16.2016.43
DO  - 10.2991/aest-16.2016.43
ID  - Lin2016/11
ER  -