Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

Quantitative characteristics of traps in AlGaN/GaN MIS-HEMT via transient capacitance measurement

Authors
Jie Lin, Bin Dong, Ning Wang, Zongdai Liu, Lingli Jiang, Kai Cheng, Hongyu Yu
Corresponding Author
Jie Lin
Available Online November 2016.
DOI
https://doi.org/10.2991/aest-16.2016.43How to use a DOI?
Keywords
AlGaN/GaN MIS-HEMT; transient capacitance measurement; traps.
Abstract
The electrical property degradation of AlGaN/GaN MIS-HEMT, including degradation of output characteristics, a higher ON-resistance and a threshold voltage negative shift (~1.8V), is correlated with near-interface trap behaviours in SiN/AlGaN. These traps are quantitatively characterized using the transient capacitance measurement, from which we could estimate the near-interface trap densities in the SiN/AlGaN. Measurements reveal the trap density before step-stress with 1.404x1015cm-3 and an increased density of 1.709x1015cm-3 after step-stress. A hot electron injection model is used to discuss the relationship between trap behaviours and device reliability.
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Proceedings
2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
Part of series
Advances in Intelligent Systems Research
Publication Date
November 2016
ISBN
978-94-6252-257-2
ISSN
1951-6851
DOI
https://doi.org/10.2991/aest-16.2016.43How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Jie Lin
AU  - Bin Dong
AU  - Ning Wang
AU  - Zongdai Liu
AU  - Lingli Jiang
AU  - Kai Cheng
AU  - Hongyu Yu
PY  - 2016/11
DA  - 2016/11
TI  - Quantitative characteristics of traps in AlGaN/GaN MIS-HEMT via transient capacitance measurement
BT  - 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/aest-16.2016.43
DO  - https://doi.org/10.2991/aest-16.2016.43
ID  - Lin2016/11
ER  -