The Influence of Source Charge collection and Parasitic Bipolar Effect on 65nm Single Event Transient Pulse Width
- 10.2991/amcce-17.2017.88How to use a DOI?
- source charge collection, parasitic bipolar, single event transient.
The parasitic bipolar conduction in CMOS source-well-drain structure triggered under heavy ion irradiation will cause wider pulse width. The source, commonly though the emitter, will inject charge to the well, so that the drain has to collect additional charge and create a wider pulse. However, in our study, the source may inject charge through parasitic bipolar conduction, but the source will also collect charge through drift and diffusion meanwhile. Under proper well contact, the charge collected by the source will exceed the charge injected by the source, resulting in a narrow pulse. Compared with NMOS, the n-well potential of PMOS tend to be disturbed easily, therefore parasitic bipolar will get conducted easily and more attention need to be paid to PMOS.
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Jiaqi Liu AU - YuanFu Zhao AU - Liang Wang AU - Hongchao Zheng AU - Lei SHu AU - Tongde Li PY - 2017/03 DA - 2017/03 TI - The Influence of Source Charge collection and Parasitic Bipolar Effect on 65nm Single Event Transient Pulse Width BT - Proceedings of the 2017 2nd International Conference on Automation, Mechanical Control and Computational Engineering (AMCCE 2017) PB - Atlantis Press SP - 500 EP - 505 SN - 2352-5401 UR - https://doi.org/10.2991/amcce-17.2017.88 DO - 10.2991/amcce-17.2017.88 ID - Liu2017/03 ER -