The Influence of Source Charge collection and Parasitic Bipolar Effect on 65nm Single Event Transient Pulse Width

DOI

10.2991/amcce-17.2017.88How to use a DOI?

Keywords

source charge collection, parasitic bipolar, single event transient.

Abstract

The parasitic bipolar conduction in CMOS source-well-drain structure triggered under heavy ion irradiation will cause wider pulse width. The source, commonly though the emitter, will inject charge to the well, so that the drain has to collect additional charge and create a wider pulse. However, in our study, the source may inject charge through parasitic bipolar conduction, but the source will also collect charge through drift and diffusion meanwhile. Under proper well contact, the charge collected by the source will exceed the charge injected by the source, resulting in a narrow pulse. Compared with NMOS, the n-well potential of PMOS tend to be disturbed easily, therefore parasitic bipolar will get conducted easily and more attention need to be paid to PMOS.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jiaqi Liu
AU  - YuanFu Zhao
AU  - Liang Wang
AU  - Hongchao Zheng
AU  - Lei SHu
AU  - Tongde Li
PY  - 2017/03
DA  - 2017/03
TI  - The Influence of Source Charge collection and Parasitic Bipolar Effect on 65nm Single Event Transient Pulse Width
BT  - Proceedings of the 2017 2nd International Conference on Automation, Mechanical Control and Computational Engineering (AMCCE 2017)
PB  - Atlantis Press
SP  - 500
EP  - 505
SN  - 2352-5401
UR  - https://doi.org/10.2991/amcce-17.2017.88
DO  - 10.2991/amcce-17.2017.88
ID  - Liu2017/03
ER  -