The Effects of Dislocations on the Crystal Growth Rate of Silicon --A Molecular Dynamics Study
Authors
C. Zhang, B. Liu, K. Li, N.G. Zhou, L. Zhou
Corresponding Author
C. Zhang
Available Online June 2016.
- DOI
- 10.2991/ame-16.2016.165How to use a DOI?
- Keywords
- Dislocation, Crystal Growth Rate, Molecular Dynamics, Silicon
- Abstract
Based on the Tersoff potential, we have investigated the effects of dislocations on the crystal growth rate of Si (110) rough interface by a molecular dynamics simulation. The atomic structures show that, the (110) interface morphology with a dislocation keeps flatness similar to that of dislocation-free. However, the interface with a dislocation contains a type of "V" groove, which is formed gradually around the outcrop of the dislocation. The results of the crystal growth rate exhibit that the dislocation prevents the crystal growth of Si, while the dislocation has a little influence on the crystal growth rate. The relationship between the dislocation and the crystal growth rate should relate to the difference of interface morphologies.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - C. Zhang AU - B. Liu AU - K. Li AU - N.G. Zhou AU - L. Zhou PY - 2016/06 DA - 2016/06 TI - The Effects of Dislocations on the Crystal Growth Rate of Silicon --A Molecular Dynamics Study BT - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016) PB - Atlantis Press SP - 1023 EP - 1027 SN - 2352-5401 UR - https://doi.org/10.2991/ame-16.2016.165 DO - 10.2991/ame-16.2016.165 ID - Zhang2016/06 ER -