Transparent Conductive Thin Films of Aluminum-doped Zinc Oxide Prepared by Magnetron Sputtering

DOI

10.2991/ame-16.2016.166How to use a DOI?

Keywords

Aluminum-doped zinc oxide; Magnetron sputtering; Substrate temperature; X-ray diffraction; Transmittance; Resistivity

Abstract

Transparent conductive thin films of aluminum-doped zinc oxide (ZAO) were prepared by radio-frequency magnetron sputtering with ZAO (98 wt% ZnO, 2 wt% Al2O3) as the ceramic target. The visible transmittance was investigated by ultraviolet–visible spectroscopy, the carrier concentration and Hall mobility were measured by the Van der Pauw method, and the phase composition was characterized by X-ray diffraction. The results show that the substrate temperature was a dominant factor of the properties, with the ZnO film deposited at a substrate temperature of 200 °C and a pure-argon gas pressure of 1 Pa exhibiting optimal performance. The resistivity and average transmittance in the wavelength range of 300–760 nm were 2.0 × 10 4   cm and 90.6%, respectively.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - H. Zhu
AU  - H.M. Wang
AU  - S.Q. Gong
AU  - H.Y. Kuang
AU  - Y.X. Wang
PY  - 2016/06
DA  - 2016/06
TI  - Transparent Conductive Thin Films of Aluminum-doped Zinc Oxide Prepared by Magnetron Sputtering
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 1028
EP  - 1033
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.166
DO  - 10.2991/ame-16.2016.166
ID  - Zhu2016/06
ER  -