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In the rapidly advancing landscape of semiconductor technology, Gate-All-Around FET (GAA FET) stands as a promising innovation poised to redefine the capabilities of next-generation electronic devices. This paper investigates the integration challenges and potential opportunities associated with the...

This paper presents a simulation of two stages Cascode LNA using ladder matching network applicable for WiMAX applications. It’s using the FHX76LP Low Noise SuperHEMT FET transistor. The LNA designed used Ladder-matching network consisting of lump reactive element at the input and the T-matching network...

This paper discussed the design of a 0.18 m CMOS process 5.8GHz RF front-end circuit, and the simulation and experiment were carried out. The main circuit design are low noise amplifier and mixer, the noise amplifier is overlay architecture, and using dual output mode single input / transformer coupling;...

This study evaluated the AC parasitic capacitances and turn-off resistance of GaN FETs. Moreover, the study proposes an easily adjustable gate drive circuit appropriate for driving E-mode, cascode, and D-mode GaN FETs in the same driver topology. The proposed gate drive circuit involving only positive...

Uzbekistan’s drastically changing continental climate and rapidly rising residential energy consumption mean that structures that have demand-side flexibility to facilitate the incorporation of renewable energy are needed shortly. The present research assesses the energy flexibility of residential buildings...

The photo-electrical properties of few-layer WS2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The few-layer WS2 FETs are n-type and possess a high gate modulation (On/Off ratio is larger than 104) and a relatively high carrier mobility ( ). The photo-electrical...

The Fe doped TiO2 (FET) gels were synthesized by different ferric salts and analyzed by thermal gravimetric analyzer and X-ray diffraction. The TG curves show that the valence states of Fe had a great influence on the preparation of FET gels, Fe3+ was easy to replace titanium atoms to form lattice and...

In this study, we report on the electrical and optoelectronic properties of field effect transistors based on multilayer MoSe2. The multilayer MoSe2 device showed a room-temperature mobility of 27.3 cm2 V 1 s 1 and possessed a high gate modulation larger than 105. We obtained an ultrahigh photoresponsivity...

A new preparation process to product double-gate field effect transistor (DG-FET) of monolayer graphene nanoflakes, fabricated by mechanical exfoliation, was systematically studied in this paper. The graphene DG-FETs are bipolar and possess high gate modulation (On/Off ratio is large), and higher regulation...

Demands of ultra-scaled ion sensitive field effect transistors (ISFETs) with higher current sensitivity and wider dynamic pH range are sky-rocketing as the ISFET devices find their increasing applications in the arena of wearable sweat sensors. In this context, a scaled tunnel FET (TFET) can serve as...

Because of their better electrostatic control and lower short-channel effects, NW-FETs have become attractive options for low-power and high-performance nanoelectronic devices. The drain current and transconductance properties of nanowire FETs are fully investigated in this work, with a focus on low-power...

The paper examined the effects of coding in Digital Technology offered in grades 8 and 9 on the performance of grades 10 and 11 learners in Information Technology at a selected secondary school in a district of the Eastern Cape province in South Africa. The study used a mixed-methods research approach...

Conventional Metal-Oxide-Semiconductor FET (MOSFET) technology has been the industry standard in the electronics domain over the last four decades. In this time, MOSFET design has been rigorously optimized with gate length (LG) scaled down from over 10 µm in 1970s to 20 nm in the year 2014 (later, industry...

this paper introduces a kind of the rectifier circuit, adjustable constant current charging circuit, detecting voltage circuit, display circuit and power circuit of six parts of constant current source charger design scheme. The charger using op-amp composition adjustable constant current charge, constant...

The concept of metal-oxide-semiconductor-field-effect-transistor (MOSFET) was proposed by Julius Edgar Lilienfeld and the electrical characterization and mathematical theory began since 1959 at Bell Telephone Laboratories. It has been a revolutionary invention since then and have led to the new generation...

In this paper, a linear power amplifier with MESFET tube is simulated and optimized by the application of ADS software and S parameter method. The MESFET tube is a kind of low distortion power FET provided by the company of Excelics and its tag is EFC480C. After optimizing the size of the power amplifier...